The document describes the features and characteristics of a product.
The document is a preliminary technical datasheet for two models of N-Channel Enhancement Mode MOSFETs: the IXTH68N20 and the IXTK74N20. These devices feature a low RDS(on) HDMOSTM process and are designed for applications such as motor controls, DC choppers, and uninterruptible power supplies (UPS). The datasheet lists key features including rugged polysilicon gate cell structures and international standard packaging.
| Drain-Source Voltage (VDS) | 200 V |
|---|---|
| Operating Junction Temperature Range | -55°C to +150°C |
The devices are suitable for motor controls, DC choppers, and switch-mode or resonant-mode uninterruptible power supplies (UPS).
The continuous gate-source voltage rating is -20 V, with a transient limit of -30 V.
Key advantages include easy mounting with one screw, space savings due to high power density, and a rugged polysilicon gate cell structure.