The IDT71V3577/79 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V3577/79 SRAMs contain write, data, address and control registers. There are no registers in the data output path (flow-through architecture). Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as the IDT71V3577/79 can provide four cycles of data for a single address presented to the SRAM. An internal burst address counter tracks the address during burst mode to ensure that data is provided to the system during the burst.
The IDT71V3577/79 are high-speed SRAMs organized as 128K x 36 or 256K x 18. These devices utilize a flow-through architecture where there are no registers in the data output path, allowing for fast access times up to 117MHz. They support burst modes (linear or interleaved) controlled by an internal counter and the LBO input pin.
| Memory Configurations | 128K x 36, 256K x 18 |
|---|---|
| Clock Frequency (Commercial) | up to 117MHz |
| Access Time (Industrial) | 8.0ns / 8.5ns |
| Core Power Supply | 3.3V |
| Operating Temperature (Industrial) | -40°C to +85°C |
| Package Types | TQFP, BGA, fBGA |
The IDT71V3577/79 SRAMs come in 128K x 36 and 256K x 18 memory configurations.
Commercial grade units support a clock frequency of up to 117MHz.
Industrial devices operate within a temperature range from -40°C to +85°C.