This document describes an NPN resistor-equipped transistor with a total power dissipation of 300mW and a very small size. The product can be used for general purpose switching and amplification, inverter and interface circuits, and circuit driving.
The document describes the Philips PEMH9, which is an NPN resistor-equipped transistor designed to replace two SC-75/SC-89 packaged transistors on the same PCB area. It features internal bias resistors (R1 = 10 kΩ and R2 = 47 kΩ) and utilizes a very small 1.6 x 1.2 mm ultra-thin SOT666 package.
Key specifications include a maximum collector-emitter voltage of 50 V, a peak collector current of 100 mA, and a total power dissipation of up to 300 mW per device. The transistor is suitable for general-purpose switching and amplification applications, as well as use in inverters, interface circuits, and circuit drivers.
| Total Power Dissipation (Per Device) | 300 mW |
|---|---|
| Collector-Emitter Voltage | 50 V |
| Peak Collector Current | 100 mA |
| Input Resistor R1 Value | 10 kΩ |
The maximum total power dissipation per transistor is 200 mW when the ambient temperature is below 25 °C.
The maximum collector-emitter voltage is 50 V.
The internal resistor R1 is 10 kQ and the internal resistor R2 is 47 kQ.