This document describes the BU4508DX silicon diffused power transistor from Philips Semiconductors. It is a new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode. The product is intended for use in horizontal deflection circuits of color television receivers and features exceptional tolerance to base drive and collector current load variations, resulting in a very low worst case dissipation.
The document describes the Philips Semiconductors BU4508DX, an enhanced performance silicon diffused power transistor designed for use in horizontal deflection circuits of color television receivers. It features exceptional tolerance to base drive and collector current load variations.
Key specifications include a peak collector-emitter voltage (Vcesm) of 1500 V, a DC collector current (Ic) of 8 A, and a total power dissipation (Ptot) of 45 W at Tj = 25°C. The device is housed in a plastic full-pack envelope with an isolated case.
| Collector current (DC) (Ic) | 8 A |
|---|---|
| Total power dissipation (Ptot) | 45 W |
| Turn-off fall time | 400 ns |
It is intended for use in horizontal deflection circuits of colour television receivers.
Yes, the seating plane is electrically isolated from all terminals.