Philips Semiconductors PHE13002AU Silicon Diffused Power Transistor Datasheet

The PHE13002AU is a high-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.


Philips Semiconductors PHE13002AU Silicon Diffused Power Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
70 KB
Published
06 June, 2012
Updated
30 September, 2023
MD5 checksum
EAF94DBA237CFA8783E42E77A5BAD7D0

About this manual

The document describes the PHE13002AU as a silicon diffused power transistor designed for use in high-frequency electronic lighting ballast applications, converters, and inverters. It is packaged in an SOT533 plastic single-ended package with three leads.

Key electrical characteristics include a collector-emitter voltage peak value of 600 V, a maximum DC collector current of 1.5 A, and a total power dissipation of 50 W at 25 °C. The datasheet provides detailed static and dynamic characteristic tables, thermal resistance data, and typical application curves for both resistive and inductive switching.

What's inside

  • General Description
  • Quick Reference Data
  • Limiting Values
  • Static Characteristics
  • Dynamic Characteristics
  • Thermal Resistances
  • Inductive Switching
  • Resistive Switching
  • Mechanical Data
  • Definitions

Specifications

Collector current (DC) (lc)1.5 A
Total power dissipation (tot)50 W
Package typeSOT533

Frequently asked questions

What is the maximum junction temperature?

The maximum junction temperature is 150 °C.

Is this transistor suitable for life support applications?

No, these products are not designed for use in life support appliances or systems where malfunction can result in personal injury.

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