The document describes the IS28F020, a high-speed, low-power 262,144-byte (256KB) CMOS flash memory device. It offers electrical chip-erasure and reprogramming capabilities compatible with standard EPROM technology while providing advanced latch-up immunity.
The datasheet details the device's features, including a maximum access time of 70ns and availability in 32-pin DIP, PLCC, and TSOP packages. It outlines operating principles such as command register architecture for microprocessor compatibility, integrated stop timers for programming/erase operations, and specific bus operation modes like read-only, write protection, and ISSI identifier retrieval.
| Memory Capacity | 262,144 x 8 bits (256KB) |
|---|---|
| Maximum Access Time | 70 ns |
| Maximum Active Current | 30 mA |
| Maximum Standby Current | 100 µA |
| Program/Erase Voltage | 12.0V + 5% |
| Chip-Erase Time (Typical) | One second |
| Byte-Program Time (Typical) | 10 µs |
| Chip-Program Time | 4 second |
The device is available in 32-pin DIP, 32-lead PLCC, and 32-pin TSOP packages.
When the Vpp pin is at a low voltage level, the IS28F020 functions as a read-only memory.