Hitachi HZM6.8MFA Silicon Planar Zener Diode Datasheet

HZM6.8MFA is a silicon planar Zener diode that can absorb surge. It is packaged in a monolithic design with four devices. The MPAK-5 package is suitable for high density surface mounting and high speed assembly.


Hitachi HZM6.8MFA Silicon Planar Zener Diode Datasheet - cover page
Brand
Hitachi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
25 KB
Published
05 June, 2012
Updated
29 September, 2023
MD5 checksum
69820158AEA168B36CFCBFF7CEBAC373

About this manual

The document describes the HZM6.8MFA, a monolithic silicon planar zener diode available in an MPAK-5 package suitable for high-density surface mounting and high-speed assembly. It is designed to absorb surges and consists of four devices within a single unit.

Key technical specifications include a Zener voltage range of 6.47V to 7.00V, a maximum power dissipation of 200mW (for the total device), and an operating junction temperature up to 150°C. The datasheet also provides package dimensions for the MPAK-5 unit and outlines cautionary notes regarding usage in critical applications like aerospace or medical equipment.

What's inside

  • Features
  • Ordering Information
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Main Characteristic Graphs
  • Package Dimensions

Specifications

Zener Voltage (Vz)6.47 to 7.00 V
Power Dissipation (Pda)200 mW
Junction Temperature (Tj)150 °C
Storage Temperature (Tsig)-55 to +150 °C
Reverse Current (Ir)_ 2 uA
Capacitance (Cc)_ 130 pF

Frequently asked questions

What is the maximum power dissipation for this diode?

The absolute maximum power dissipation rating is 200 mW.

How many Zener voltage devices are included in this package?

This monolithic package contains four devices designed for surge absorption.

What is the maximum junction temperature allowed?

The absolute maximum junction temperature rating is 150 °C.

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