This document describes the basic parameters and characteristics of 2SB791(K) silicon PNP epitaxial medium speed and power switching complementary pair with 2SD970(K).
This document is a technical datasheet for the Hitachi 2SB791(K), a Silicon PNP epitaxial transistor designed as a medium speed and power switching component. It is intended to be used in a complementary pair with the 28D970(K) model.
| Collector to base voltage | -120 V |
|---|---|
| Collector current | -8 A |
| Collector power dissipation | 40 W |
| Junction temperature | 150 °C |
| DC current transfer ratio | 1000 to 20000 |
The device uses a TO-220AB package.
No, the document states that this product is not designed to be radiation resistant.