This document provides advanced technical information for the IXYS VMD600-007S, an N-channel enhancement mode Dual Power HiPerFET™ Module. The device features a built-in Schottky diode and utilizes Direct Copper Bonded Al2O3 ceramic technology with a low inductance package designed for high-speed switching applications.
| Maximum Drain-Source Voltage (Voss) | 70 V |
|---|---|
| Continuous Current (Iho) | 620 A |
| Pulse Current (low) | 2480 A |
| Power Dissipation (P,) | 1350 W |
| Operating Temperature Range | -40 ...+150 °C |
| Package Type | 3 * International standard package |
The recommended mounting torque for an M6 terminal connection is 2.25-2.75 N·m (20-25 N·milb.in).
The module supports a maximum continuous current of 620 A when the temperature is 25°C.
The M6 terminal requires a torque of 2.25-2.75 N·m, while the M5 terminal requires 2.5-3.7 N·m.