BU1706A is an enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.
This document is a product specification datasheet for the Philips BU1706A, an enhanced performance silicon diffused power transistor. It is designed as a new generation high-voltage, high-speed switching npn transistor in a plastic envelope, specifically intended for use in high frequency electronic lighting ballast applications.
The datasheet provides comprehensive technical data including quick reference ratings, static and dynamic characteristics, thermal resistances, and safe operating areas. It details parameters such as collector-emitter voltage (up to 1750V peak), collector current (up to 8A peak), and switching times under both resistive and inductive load conditions.
| Collector-emitter voltage peak value (Vcesm) | - 1750 Vv |
|---|---|
| Collector current peak value (Ion) | - 8 A |
| Total power dissipation (Tj <= 25 °C) (Ptot) | - 100 Ww |
| Collector-emitter saturation voltage (Veesat) | - 1.0 Vv |
| Turn-off fall time (resistive load) | 0.25 0.6 [us |
| Junction to ambient thermal resistance (Rth ja) | 60 - K/W |
It is intended for use in high frequency electronic lighting ballast applications.
This data sheet contains final product specifications.