This document is a technical datasheet for the International Rectifier IRFK4HE50 and IRFK4JE50 Isolated Base Power HEX-pak™ Assemblies. These components utilize well-proven HEXFET™ dies assembled into TO-240 packages with 2.5kV rms isolation, designed for high current capability applications where space is a premium.
| Continuous Drain Current (25°C) | 26 A |
|---|---|
| Continuous Drain Current (00°C) | 16 A |
| Pulse Drain Current | 104 AG |
| Maximum Power Dissipation | 500 W |
| Gate-to-Source Voltage | 20 V |
| RMS Isolation Voltage (circuit to base) | 25 kV |
| Operating Junction Temperature Range | -40 to 150 °C |
| Storage Temperature Range | -40 to 150 °C |
| Junction-to-Case Thermal Resistance | 0.25 K/W |
The components are assembled into the TO-240 package.
The package features 2.5kV rms isolation.