IRFD420 HEXFET® Power MOSFET is a high performance, low on-resistance, fast switching N-channel MOSFET. The device features a 500V breakdown voltage, 3.0 Ohm on-resistance and 3.0 Ampere peak current. IRFD420 is available in a 4-pin DIP package and is suitable for automatic insertion, stacking and paralleling.
This document is a technical datasheet for the IRFD420, a third-generation HEXFET power MOSFET from International Rectifier. The device features a 4-pin DIP package designed for automatic insertion and stacking on standard 0.1 inch pin centers. It offers fast switching speeds, ruggedized design, and low on-resistance suitable for various power applications.
| Breakdown Voltage | 500 V |
|---|---|
| Static On-Resistance | 30 Ω |
| Power Dissipation (25°C) | 1.0 W |
| Operating Junction Temperature Range | -55 to + 150 °C |
The device uses a 4-pin DIP package.
Yes, it can be stacked in multiple combinations on standard 0.1 inch pin centers.