The ATF-10136 is a GaAs FET with a low noise figure of 0.5 dB, a low bias of 20 mA, a gain of 13 dB, and an output power of 20 dBm. It is housed in a 36 micro-X package and is available with tape and reel packaging.
The document provides technical data for the ATF-10136, a high-performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a 36 micro-X package. The device is designed for use as the first stage of low noise amplifiers operating in the 0.5 to 12 GHz frequency range.
| Frequency Range | 0.5-12 GHz |
|---|---|
| Optimum Noise Figure (Typical) | 0.5 dB at 4 GHz |
| Associated Gain (Typical) | 13.0 dB at 4 GHz |
| Output Power (Typical) | 20.0 dBm at 4 GHz |
The typical optimum noise figure is 0.5 dB.
The specifications assume a drain-source voltage of 2 V and a drain current of 25 mA.