This document describes the features and characteristics of the AT-42000 high-frequency NPN bipolar transistor chip, including high output power, high gain, low noise figure, and high gain-bandwidth product.
The document provides technical data for the Hewlett-Packard AT-42000, a general-purpose NPN silicon bipolar transistor chip designed for low noise, wideband amplifier, mixer, and oscillator applications in VHF, UHF, and microwave frequencies. The device features a 4 micron emitter-to-emitter pitch and is fabricated using HP's 10 GHz fy Self-Aligned-Transistor (SAT) process.
| Max Output Power (2.0 GHz) | 21.0 dBm Typical |
|---|---|
| Max Output Power (4.0 GHz) | 20.5 dBm Typical |
| Noise Figure (Typical, 2.0 GHz) | 1.9 dB |
| Gain-Bandwidth Product | 9.0 GHz Typical |
| Collector-Emitter Voltage (Max) | 12 V |
| Power Dissipation (Max) | 600 mW |
The recommended procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.
The typical gain is 15.0 dB at 2.0 GHz and 10.0 dB at 4.0 GHz.