This document is the product manual for AT-32011 and AT-32033, two low current high performance NPN silicon bipolar transistors. These two products are optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets.
This document provides technical data for the Hewlett Packard AT-32011 and AT-32033, which are high-performance NPN silicon bipolar transistors. These devices are optimized for maximum performance at low voltage (as low as 1V) and low current operation, making them ideal for battery-powered applications in wireless markets such as pagers and mobile systems operating at 900 MHz, 1.8 GHz, and 2.4 GHz.
The datasheet details the electrical specifications, absolute maximum ratings, and typical performance characteristics including noise figure, gain, compression points, and scattering parameters for both models across various frequencies and bias conditions.
| Package Type (AT-32011) | SOT-143 SMT Plastic Package |
|---|---|
| Package Type (AT-32033) | SOT-23 3 lead SMT Plastic Package |
| Collector Current (Max) | 3mA |
Yes, both packages are industry standard and compatible with high volume surface mount assembly techniques.
The maximum junction temperature (Tj) is 150°C.