RN4605 is a Toshiba silicon PNP epitaxial transistor suitable for switching, inverter circuit, interface circuit, and driver circuit applications. It has built-in bias resistors that simplify circuit design and reduce the quantity of parts and manufacturing process.
The Toshiba RN4605 is a silicon epitaxial type dual transistor package containing two devices (Q1 PNP and Q2 NPN) in an SM6 super mini 6-lead configuration. It features built-in bias resistors to simplify circuit design for switching, inverter, interface, and driver applications.
| Collector power dissipation (Po) | * 300 mw |
|---|---|
| Transition frequency (fr) Q1 | - 200 MHz |
| Transition frequency (fr) Q2 | - 250 MHz |
The device is intended for use in switching, inverter circuit, interface circuit, and driver circuit applications.
The maximum junction temperature (Tj) is rated at 150 °C.