This is a data sheet for MBM29LV160TE/BE, a 0.23 µm process flash memory that is compatible with JEDEC standard commands, supports 3.0 V read, program and erase, and has a maximum access time of 70 ns.
The MBM29LV160TE/BE-70/90/12 is a 16‑Mbit CMOS flash memory offered in 48‑pin TSOP, 48‑pin CSOP and 48‑ball FBGA packages. It operates from a single 3.0 V supply for both read and write functions and supports access times of 70 ns, 90 ns or 120 ns. The device is compatible with JEDEC‑standard commands and pinouts, and provides a minimum of 1,000,000 program/erase cycles.
Key features include a sector‑erase architecture with multiple sector sizes, embedded program and erase algorithms, low‑Vcc write‑inhibit, hardware reset, and ready/busy output. Pin functions such as CE, OE, WE, RESET and BYTE selection are defined, and detailed bus operation tables describe timing for read, write and protection commands.
| Process Technology | 0.23 µm |
|---|---|
| Supply Voltage | 3.0 V |
| Maximum Access Time | 70 ns (typical) |
| Program/Erase Cycles | ≥ 1,000,000 |
| Sector Sizes | 8 K, 4 K, 16 K, 32 K (word mode) |
| Low‑Vcc Write Inhibit | < 2.5 V |
| Maximum Address Access Time | 70 ns / 90 ns / 120 ns |
The device offers maximum address access times of 70 ns, 90 ns or 120 ns depending on the version.
It is rated for a minimum of 1,000,000 program/erase cycles.
The memory operates from a single 3.0 V supply for both read and write functions.