MB84VD2228XEA-90/MB84VD2229XEA-90 is a 32M (×8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM product produced by FUJITSU SEMICONDUCTOR. It has a power supply voltage of 2.7 V to 3.3 V, a maximum access time of 90 ns (Flash), a maximum access time of 70 ns (SRAM), a temperature range of –25°C to +85°C, and a 71-ball BGA package.
The document describes a dual-bank semiconductor device combining 32M-bit Flash Memory and 8M-bit Static RAM in a single 71-ball BGA package. It supports simultaneous read/write operations between the two banks and features embedded algorithms for programming and erasing.
Key specifications include a maximum access time of 90 ns for Flash and 70 ns for SRAM, operating at supply voltages between 2.7 V and 3.3 V. The device includes sector erase architecture with support for read-while-erase and read-while-program functions.
| Power supply voltage (Flash) | 2.7 V to 3.3 V |
|---|---|
| Max access time (Flash) | 90 ns |
| Max access time (SRAM) | 70 ns |
| Operating Temperature | -25°C to +85°C |
| Package type | 71-ball BGA |
| SRAM Capacity | 8M bits |
The maximum access time for the Flash memory is 90 ns.
Yes, it supports simultaneous Read/Write operations using its dual bank architecture.
The device supports a minimum of 100,000 write/erase cycles.