RN2107F~RN2109F are PNP type transistors from TOSHIBA with built-in bias resistors, which can simplify circuit design, reduce the number of parts and manufacturing processes, and are complementary to RN1107F~RN1109F.
The RN2107F, RN2108F, and RN2109F are silicon PNP epitaxial transistors produced by Toshiba. They are intended for switching, inverter, interface, and driver circuit applications and are compatible with complementary RN1107F‑RN1109F devices.
The datasheet lists maximum ratings such as a collector‑base voltage of –50 V, collector‑emitter voltage of –50 V, and a collector current of –100 mA. Electrical characteristics include bias resistor values, input resistor ranges, transition frequency of about 200 MHz, and storage temperature range from –55 °C to 150 °C.
| Collector‑base voltage (VcBo) | -50 V |
|---|---|
| Collector‑emitter voltage (VCEO) | -50 V |
| Collector current (Ic) | -100 mA |
| Power dissipation (Po) | 100 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to 150 °C |
The maximum collector‑base voltage for RN2107F is –50 V.
RN2108F has a typical input resistor (R1) value of 15.4 kΩ.
The transition frequency is approximately 200 MHz.