The 2SA1077 is a silicon PNP ring‑emitter transistor (RET) offering ultra‑fast switching speed, high frequency response up to 60 MHz, and a robust safe operating area. It is especially suited for high‑frequency power amplifiers, audio power amplifiers, switching regulators and DC‑DC converters.
Key specifications include a collector‑to‑base voltage of 120 V, collector current of 10 A, power dissipation of 60 W, and a typical rise time of 0.15 µs. The device features a wide storage temperature range (‑65 °C to +150 °C) and a duty cycle below 6 %.
| Collector to Base Voltage (Vcbo) | 120 V |
|---|---|
| Emitter to Base Voltage (Vebo) | 7 V |
| Collector to Emitter Voltage (Vceo) | 120 V |
| Collector Current (Ic) | 10 A |
| Collector Power Dissipation (Tc=25°C) (Po) | 60 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range (Tstg) | -65 °C to +150 °C |
| DC Current Gain (hFE) typical | 60‑200 |
| Rise Time (tr) | 0.15 µs |
| Fall Time (tf) | 0.11 µs |
| Storage Time (tstg) | 0.5 µs |
| Maximum Duty Cycle | < 6 % |
The maximum collector current is 10 A.
It is especially well‑suited for high‑frequency power amplifiers, audio power amplifiers, switching regulators and DC‑DC converters.
The typical rise time is 0.15 µs.