The 2SA1080 is a silicon PNP ring‑emitter transistor (RET) designed for MC‑Head amplifier use. RET technology provides uniform current density, giving excellent frequency response and current‑gain linearity. An NPN complement, the 2SC2530, is also available.
Key ratings include a collector‑to‑base voltage of 40 V, collector‑to‑emitter voltage of 40 V, and a maximum collector current of 0.5 A. The device can dissipate up to 20 W at 25 °C, operates from –65 °C to +150 °C, and offers a typical high‑frequency limit of 30 MHz.
| Collector to Base Voltage (V CBO) | 40 V |
|---|---|
| Emitter to Base Voltage (V EBO) | 7 V |
| Collector Current (I C) | 0.5 A |
| Collector Power Dissipation (P0) | 20 W |
| Junction Temperature (Tj) | +150 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Typical High Frequency (f) | 30 MHz |
The complementary NPN device is the 2SC2530.
The device is rated for a maximum collector current of 0.5 A.
The typical high‑frequency limit is 30 MHz.