The 2SA1078 is a silicon PNP general‑purpose, medium‑power transistor fabricated with Fujitsu’s Ring Emitter Transistor (RET) technology. RET devices use multiple emitters with diffused ballast resistors for uniform current density, giving excellent frequency response for high‑current applications such as RF and audio power amplifiers.
Key electrical ratings include a collector‑to‑base voltage of 120 V, collector‑to‑emitter voltage of 120 V, collector current up to 2 A, and a power dissipation of 25 W at 25 °C. The device also offers a gain‑bandwidth product of 140 MHz and a DC current gain of 60‑350.
| Emitter to Base Voltage (V_EBO) | 5 V |
|---|---|
| Collector to Emitter Voltage (V_CEO) | 120 V |
| Collector Current (I_C) | 2 A |
| Power Dissipation (P_D) | 25 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -65~+150 °C |
| Gain‑Bandwidth Product (f_T) | 140 MHz |
| DC Current Gain (h_FE) | 60‑350 |
| Output Capacitance | 100 pF |
The maximum collector current is 2 A.
The typical gain‑bandwidth product is 140 MHz.