The 2SA1072 and 2SA1073 are silicon PNP general‑purpose, high‑power switching transistors that use Fujitsu's Ring Emitter Transistor (RET) technology. RET devices have multiple emitters linked by diffused ballast resistors, giving uniform current density and excellent switching performance.
These transistors are suited for high‑frequency power amplifiers, audio power amplifiers, switching regulators and DC‑DC converters. Key features include ultra‑fast switching speed, a wide safe operating area, and improved reverse second‑breakdown capability.
| Emitter‑to‑Base Voltage (Vebo) | 7 V |
|---|---|
| Collector‑to‑Emitter Voltage (Vceo) | 120 V (2SA1072) / 160 V (2SA1073) |
| Maximum Junction Temperature (Tj) | +150 °C |
| Storage Temperature Range (Tstg) | -65 °C to +150 °C |
| Gain‑Bandwidth Product (fT) | 45 MHz (2SA1072) / 60 MHz (2SA1073) |
They are especially well‑suited for high‑frequency power amplifiers, audio power amplifiers, switching regulators and DC‑DC converters.
The transistors are rated for a junction temperature up to +150 °C.