The 2SA1075 and 2SA1076 are silicon PNP general‑purpose, high‑power switching transistors built with Fujitsu’s Ring Emitter Transistor (RET) technology. Their structure provides uniform current density, enabling fast switching and high frequency response.
Typical applications include high‑frequency power amplifiers, audio power amplifiers, switching regulators and DC‑DC converters. The datasheet lists absolute maximum ratings and electrical characteristics such as voltage limits, current capability, power dissipation and temperature ranges.
| Collector‑Base Voltage (V_CBO) | 120 V (2SA1075) / 160 V (2SA1076) |
|---|---|
| Emitter‑Base Voltage (V_EBO) | 7 V |
| Collector‑Emitter Voltage (V_CEO) | 120 V (2SA1075) / 160 V (2SA1076) |
| Collector Current (I_C) | 12 A |
| Junction Temperature (T_J) | +150 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Transition Frequency (f_T) typical | 60 MHz |
They are well‑suited for high‑frequency power amplifiers, audio power amplifiers, switching regulators and DC‑DC converters.
The transistors can handle up to 12 A of collector current.
The typical transition frequency is 60 MHz.