The 2SK1132 is an N‑channel vertical MOSFET designed for high‑speed switching. It can be driven directly by ICs with a 5 V power source, allowing omission of a bias resistor and reducing part count. The device is suitable for digital circuits and can be used complementarily with the 2SJ165.
The datasheet lists key specifications such as a 50 V drain‑to‑source rating, 100 mA continuous drain current, 250 mW total power dissipation, and recommended soldering conditions (260 °C bath temperature, 10 s wave soldering). Application notes cover standard consumer electronics as well as special automotive and industrial uses.
| Drain to Source Voltage (VDS) | 50 V |
|---|---|
| Gate to Source Voltage (VGS) | +7.0 V |
| Drain Current (ID) | 100 mA |
| Pulse Drain Current (ID,pulse) | 200 mA |
| Total Power Dissipation (PD) | 250 mW |
| Input Capacitance (Ciss) | 7 pF |
| Output Capacitance (Coss) | 6 pF |
| Turn‑On Delay Time (tON) | 6 ns |
The device is rated for a maximum drain‑to‑source voltage of 50 V.
Yes, it can be directly driven by ICs that have a 5 V power source.
Standard grade devices are intended for data processing, office equipment, communication equipment, test and measurement, audio/video equipment, and other consumer products.