This document describes the features and characteristics of the 2SK1276A N-channel MOS-FET F-V Series product, including features such as fast recovery diode, high voltage, and low driving power. The product is suitable for applications such as motor control, inverters, and choppers.
The 2SK1276A is an N‑channel MOS‑FET from Gollmer Semiconductor, rated for 250 V drain‑source voltage and 20 A continuous drain current. It includes a fast‑recovery diode and is suited for motor control, inverters, and chopper applications.
The document lists absolute maximum ratings, electrical and thermal characteristics, and typical performance curves such as output resistance versus current and capacitance versus gate voltage. It also shows allowable power‑dissipation limits and safe‑operation area graphs.
| Continuous Drain Current | 20 A |
|---|---|
| Maximum Power Dissipation | 100 W |
| Operating Temperature Range | -55 °C to +150 °C |
It can conduct a continuous drain current of 20 A.
The maximum power dissipation is 100 W.
The specified operating temperature range is from –55 °C to +150 °C.