The QS5U28 is a low voltage drive Pch+SBD MOS FET with low switching loss and low forward voltage, which is suitable for load switch and DC/DC conversion applications.
The QS5U28 is a P‑channel MOSFET combined with a Schottky barrier diode in a TSMT5 package. It offers low on‑state resistance, fast switching, and a low‑voltage (2.5 V) drive capability, making it suitable for load‑switch and DC/DC conversion applications.
The document lists absolute maximum ratings, detailed electrical characteristics, and typical performance curves. It also includes packaging details, measurement circuit diagrams, and legal notices for export control and usage restrictions.
| Drain‑source voltage (VDS) | -20 V |
|---|---|
| Gate‑source voltage (VGS) | +12 V |
| Continuous drain current (ID) | 2.0 A |
| Pulsed drain current (IDp) | 8.0 A |
| Reverse voltage (VR) | 20 V |
| Forward voltage of Schottky diode (VF) | 0.45 V |
| Junction temperature (TJ) | 150 °C |
| Storage temperature range (TSTG) | -55 °C to +150 °C |
The device is rated for a drain‑source voltage of –20 V.
The Schottky diode has a typical forward voltage of 0.45 V.
It can conduct a continuous drain current of up to 2.0 A.