The QS5U34 is a device that integrates Nch MOSFET and Schottky barrier diode. It features low on-state resistance, fast switching, and low voltage drive. It is suitable for load switches and DC/DC conversion.
The QS5U34 is a TSMT5‑package device that integrates an N‑channel MOSFET with a Schottky barrier diode. It provides a low 1.8 V drive voltage, low on‑state resistance, and fast switching, making it suitable for load‑switch and DC‑DC conversion applications.
The datasheet lists absolute maximum ratings, electrical characteristics, and typical performance curves. Key specifications include a 20 V drain‑source voltage, 10 V gate‑source voltage, 41.5 A continuous drain current, and a total power dissipation of 1.25 W. Packaging details and safety notices are also provided.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | 10 V |
| Continuous drain current (ID) | 41.5 A |
| Total power dissipation | 1.25 W |
| Reverse voltage (VR) | 20 V |
| Forward voltage (VF) of Schottky diode | 0.86 V |
| On‑state resistance (RDS(on)) typical | 170 mΩ |
| Drive voltage | 1.8 V |
The maximum drain‑source voltage is 20 V.
The device is designed for a low drive voltage of 1.8 V.
It is supplied in a TSMT5 package that integrates the MOSFET and Schottky diode.
The Schottky diode can withstand a reverse voltage of 20 V.