The QS5U36 is a device that combines an N-channel MOSFET with a Schottky barrier diode, with low voltage drive (1.5V). It has low on-state resistance and fast switching characteristics, and the Schottky barrier diode has low forward voltage. Suitable for switching applications.
The QS5U36 is an N‑channel MOSFET combined with a Schottky barrier diode in a single TSMT5 package. It offers low on‑state resistance, fast switching, and a low 1.5 V drive voltage, making it suitable for switching applications.
The datasheet lists key ratings such as a 20 V drain‑source voltage, ±10 V gate‑source voltage, 2.5 A continuous drain current, and a power dissipation of 1.25 W. It also includes characteristic curves, measurement circuit diagrams, and safety notices for proper design use.
| On‑state resistance (RDS(on)) | 74‑104 mΩ |
|---|---|
| Forward voltage of Schottky diode (VF) | 0.49 V |
The device operates with a low drive voltage of 1.5 V.
The Schottky diode has a forward voltage of about 0.49 V.