The QS6U22 Transistors is a package that combines Pch MOS FET with a Schottky barrier diode. It features low on-state resistance, fast switching, low voltage drive, and low forward voltage. It is suitable for applications such as load switches and DC/DC conversions.
The QS6U22 combines a P‑channel MOSFET and a Schottky barrier diode in a TSMT6 package. It features low on‑state resistance, low‑voltage (2.5 V) drive capability, and a built‑in diode with low forward voltage, making it suitable for load‑switch and DC‑DC conversion applications.
Typical applications include load switching and DC‑DC converters. The device is supplied in a 6‑lead TSMT6 surface‑mount package and includes ESD protection between gate and source. The datasheet provides absolute maximum ratings, electrical characteristics, and switching performance curves. This manual is written in Chinese.
| Gate‑source voltage (V_GSS) | ±12 V |
|---|---|
| On‑state resistance (R_DS(on)) | 170 mΩ (typical) |
| Forward voltage of body diode (V_F) | 0.49 V |
The gate‑source voltage rating is ±12 V.
Typical on‑state resistance is about 170 mΩ.
The forward voltage of the body diode is approximately 0.49 V.