2SAR523M/2SAR523EB/2SAR523UB is a PNP silicon epitaxial planar transistor produced by ROHM Co., Ltd. It has a maximum rating of -50V and -0.1A. It can be used as a switch and LED driver.
The 2SAR523 series are general‑purpose PNP silicon epitaxial planar transistors offered in three variants (M, EB, UB). They are intended for switching and LED driver applications in audio‑visual, office‑automation, communication, and consumer electronic equipment.
Key specifications include a collector‑emitter voltage of 50 V, a maximum collector current of 200 mA, a DC current gain ranging from 120 to 560, and a transition frequency up to 300 MHz. The devices are supplied in VMT3, EMT3F, or UMT3F tape‑and‑reel packages and are rated for storage temperatures from –55 °C to +150 °C.
| Collector‑base voltage (Vcbo) | ‑50 V |
|---|---|
| Collector‑emitter voltage (Vceo) | ‑50 V |
| Emitter‑base voltage (Vebo) | 5 V |
| Maximum collector current (Ic) | 200 mA |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | ‑55 °C to +150 °C |
| Transition frequency (ft) | 300 MHz |
| DC current gain (hFE) | 120 – 560 |
| Packaging types | VMT3, EMT3F, UMT3F |
The maximum collector current is 200 mA.
They are offered in VMT3, EMT3F, and UMT3F tape‑and‑reel packages.
Store the devices between –55 °C and +150 °C.
No, they are not designed to be radiation tolerant.