2SAR522M / 2SAR522EB / 2SAR522UB is a PNP silicon epitaxial planar transistor produced by ROHM, with a rated voltage of -20V and a rated current of -0.2A. It can be used for switch, LED driver and other applications.
This datasheet describes ROHM's 2SAR522 series PNP silicon epitaxial planar transistors, intended for general‑purpose switching, LED driver, and other low‑power applications. It lists the device variants 2SAR522M, 2SAR522EB, and 2SAR522UB and provides their electrical parameters, packaging options, and maximum ratings.
Key specifications include a collector‑base voltage of –20 V, collector‑emitter voltage of –20 V, emitter‑base voltage of 5 V, and a typical transition frequency of 350 MHz. The sheet also details packaging types (taping) and legal notices regarding usage and export.
| Collector‑base voltage (VcBO) | -20 V |
|---|---|
| Collector‑emitter voltage (VCEO) | -20 V |
| Emitter‑base voltage (VEB0) | 5 V |
| Maximum collector current (Ic) | 200 mA |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (ft) | 350 MHz |
| DC current gain (hFE) | 120‑560 |
| Packaging type | Taping |
The maximum collector current is 200 mA.
The collector‑emitter breakdown voltage is –20 V.
The typical transition frequency is 350 MHz.
The devices are supplied in a taping package.