This document describes the features and characteristics of the medium power transistor 2SA1036K produced by ROHM Co., Ltd. These include large IC, low VCE(sat), and complementarity with 2SC2411K. The transistor is a PNP silicon transistor of epitaxial planar type, suitable for low-voltage operation. The document also provides the absolute maximum ratings and electrical characteristics of the transistor.
This data sheet describes the ROHM 2SA1036K medium‑power PNP transistor. It lists key features such as large collector current (0.5 A) and low saturation voltage, and provides the transistor’s structure, absolute maximum ratings, and detailed electrical characteristics.
The document also includes mechanical dimensions, packaging information (SMT3/SC‑59), and a notice outlining usage restrictions and warranty disclaimer. It is intended for designers of audio‑visual, office‑automation, communication, and other electronic equipment.
| Collector current (Ic) max | 0.5 A |
|---|---|
| Emitter‑base voltage (Vebo) | 5 V |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 °C to +150 °C |
| Collector power dissipation (P e) | 0.2 W |
| Package type | SMT3 (SC‑59) |
| Basic ordering unit | 3000 pieces |
The maximum collector current is 0.5 A.
It can be stored from –55 °C up to +150 °C.
The transistor is supplied in an SMT3 (SC‑59) surface‑mount package.
No copying or reproduction of the document is permitted without ROHM’s consent.