2SB852K is a high-gain amplifier transistor with Darlington connection and a built-in 4kΩ resistor between base and emitter.
The 2SB852K is a high‑gain Darlington transistor designed for up to 32 V collector‑emitter voltage and a DC current gain of about 5000. It features an internal 4 kΩ resistor between base and emitter and is compatible with the 2SD1383K.
The document lists absolute maximum ratings, detailed electrical characteristics, characteristic curves, and packaging information (SMT3 package). It also includes legal and export‑control notices from ROHM Co., Ltd.
| Collector‑emitter voltage (Vceo) | -32 V |
|---|---|
| Collector current (Ic) | -0.3 A |
| Transition frequency (fT) | 200 MHz |
| Power dissipation (Pd) | 0.2 W |
| Junction temperature (Tj) | 150 °C |
| Package type | SMT3 |
| DC current gain (hFE) | ≈ 5000 |
The device is rated for a maximum collector‑emitter voltage of -32 V.
The maximum collector current is -0.3 A.
The transition frequency is specified as 200 MHz.
It is supplied in an SMT3 surface‑mount package.