MZ0912B50Y is a NPN microwave power transistor produced by Philips. It features high emitter efficiency, excellent common-mode rejection ratio (CMRR), low thermal resistance, and is suitable for pulse power amplifiers from 960 to 1215 MHz.
This datasheet describes the Philips MZ0912B50Y NPN microwave power transistor, its electrical specifications, thermal characteristics and mechanical package. It includes limiting values, recommended mounting, and safety information for handling the beryllium‑oxide substrate.
The document also lists the component values used in the reference test circuit, provides load‑power and impedance curves, and gives worldwide contact addresses for Philips Semiconductors.
| Collector‑Emitter Voltage (VcEO) | 20 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 60 V |
| Emitter‑Base Voltage (VeBo) | 3 V |
| Storage Temperature Range | -65 °C to +200 °C |
| Maximum Junction Temperature | 200 °C |
| Junction‑to‑Mount Thermal Resistance (Pinj‑mb) | 4.9 K/W |
| Mount‑to‑Heatsink Thermal Resistance (Rin mb‑h) | 0.2 K/W |
| Package Type | SOT443A |
| Maximum Screw Torque | 0.5 Nm |
The device contains beryllium oxide and must not be damaged; users should follow toxic‑material handling guidelines and dispose of it as special chemical waste.
A M3 screw is recommended for mounting the SOT443A package.