The document describes the features and characteristics of Philips Semiconductors' TrenchMOS transistors PHP80N06LT and PHB80N06LT, including low on-state resistance, fast switching, stable off-state characteristics, and high thermal cycling performance.
The document provides the complete specifications for Philips' TrenchMOS™ logic‑level N‑channel power transistors PHP80NO6LT (lead‑frame SOT78/TO220AB) and PHB80NO6LT (surface‑mount SOT404). It includes electrical characteristics, thermal ratings, mechanical dimensions, and mounting instructions.
Key sections cover features, pin assignments, limiting values, thermal resistances, electrical parameters, reverse‑diode behavior, avalanche ratings, mechanical data, and definitions of data‑sheet status.
| Thermal resistance junction‑to‑ambient (RθJA) for SOT78 | 0.84 K/W |
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PHP80NO6LT is supplied in a SOT78 (TO220AB) leaded package, while PHB80NO6LT is supplied in a SOT404 surface‑mount package.
Typical on‑state resistance is about 0.84 mΩ for the SOT78 package.