PESDxS2UQ series double ESD protection diodes in SOT663 package. Features include uni-directional ESD protection, maximum peak pulse power Ppp = 150 W, low clamping voltage V(CL)R = 20 V, low reverse leakage current IRM < 1 nA, ESD protection > 30 kV, conforming to IEC 61000-4-2, level 4 (ESD) and IEC 61000-4-5 (surge) standards. Applications include computers and peripherals, communication systems, audio and video equipment, high speed data lines and parallel ports.
The PESDxS2UQ series from Philips Semiconductors offers uni‑directional double ESD protection for up to two data lines. It is intended for use in computers, communication systems, audio/video equipment and high‑speed data lines.
Key specifications include a peak pulse power of 150 W, low clamping voltage of 20 V, reverse stand‑off voltages from 3.3 V to 24 V, and ESD protection ratings up to 30 kV. The devices operate from –65 °C to +150 °C ambient temperature and can withstand a junction temperature of 150 °C.
| Peak pulse power | 150 W at 8/20 ps |
|---|---|
| Clamping voltage | 20 V at 15 A |
| Reverse leakage current | < 1 nA |
| Peak pulse current | 15 A (3 V/5 V devices) |
| Junction temperature limit | 150 °C |
| Operating ambient temperature | -65 °C to +150 °C |
They can dissipate a peak pulse power of 150 W at an 8/20 ps pulse.
The junction temperature is rated up to 150 °C, and the ambient operating range is –65 °C to +150 °C.
The reverse leakage current is less than 1 nA.