PHD3N20L is a logic level field-effect power transistor produced by Philips Semiconductors. Its maximum drain-source voltage is 200V, maximum drain current is 3.5A, and maximum total power dissipation is 50W. This product is suitable for switched mode power supplies (SMPS), motor control circuits and general purpose switching applications.
The PHD3N20L is a N‑channel enhancement‑mode logic‑level PowerMOS transistor designed for switched‑mode power supplies, motor control and general switching applications. It features a 200 V drain‑source rating, 3.5 A continuous drain current and a total power dissipation of 50 W.
The device is supplied in an SOT428 surface‑mount package with a maximum height of 2.38 mm, a mass of 1.4 g, and includes detailed electrical, thermal and mechanical specifications for designers.
| Drain‑source voltage (VDS) max | 200 V |
|---|---|
| Continuous drain current (ID) max | 3.5 A |
| Total power dissipation (PD) max | 50 W |
The PHD3N20L can withstand up to 200 V between drain and source.
The SOT428 package has a maximum height of 2.38 mm and a mass of 1.4 g.