This document describes the S29GL-N series flash memory products, including three models: 512 Megabit, 256 Megabit, and 128 Megabit. These products feature 110 nm MirrorBit process technology and support 3.0 volt-only page mode. It is also mentioned that S29GL512P, S29GL256P, and S29GL128P supersede S29GL512N, S29GL256N, and S29GL128N respectively, and this is a factory-recommended product migration. The document also reminds readers to verify the latest information before finalizing their design.
The S29GL512N/256N/128N family are 3.0 V single‑power‑supply page‑mode flash memories fabricated with 110 nm MirrorBit technology. They are offered in 512 Mbit, 256 Mbit, and 128 Mbit densities and support a 16‑bit (or 8‑bit) data bus.
Key features include low‑power operation (typical 25 mA active read at 3 V), 100,000 erase cycles per sector, 20‑year data retention, and flexible sector architecture with secured silicon sector protection. Devices are supplied in 56‑pin TSOP or 64‑ball Fortified BGA packages.
| Operating Voltage | 3.0 V single supply |
|---|---|
| Access Time (S29GL128N / S29GL256N) | 90 ns |
| Access Time (S29GL512N) | 100 ns |
| Typical Erase Cycles per Sector | 100,000 |
| Typical Data Retention | 20 years |
| Density – S29GL512N | 512 Mbit (67,108,864 bytes) |
| Density – S29GL256N | 256 Mbit (33,554,432 bytes) |
| Density – S29GL128N | 128 Mbit (16,777,216 bytes) |
The devices operate from a single 3.0 V power supply for both read and write functions.
S29GL128N and S29GL256N have 90 ns access time, while S29GL512N provides 100 ns access time.
Each sector is rated for about 100,000 typical erase cycles.