This document contains information on a product under development at FASL LLC. The product is a flash memory with options of 512 megabit, 256 megabit, and 128 megabit capacities. It operates at 3.0 volts and features 110 nm MirrorBit process technology. The product has distinctive characteristics such as single power supply operation, enhanced VersatileI/O™ control, SecSi™ (Secured Silicon) sector region, and flexible sector architecture.
This document is an advance information datasheet for the S29GL512/256/128N family of devices, which are 512 Megabit, 256 Megabit, and 128 Megabit flash memories manufactured using Spansion's 110 nm MirrorBit process technology. The devices operate on a single 3.0 volt power supply for both read and write functions.
| Capacity (S29GL512N) | 512 Megabit |
|---|---|
| Capacity (S29GL256N) | 256 Megabit |
| Capacity (S29GL128N) | 128 Megabit |
| Process Technology | 110 nm MirrorBit process technology |
| Operating Voltage (Vcc) | 3.0 Volt-only |
| Access Time (S29GL128N/S29GL256N) | 80 ns |
| Access Time (S29GL512N) | 90 ns |
| Data Retention | 20-year data retention typical |
| Erase Cycles | 100,000 erase cycles per sector typical |
| Package Options | 56-pin TSOP or 64-ball Fortified BGA |
The devices require only a single 3.0 volt power supply for both read and write functions.
Yes, a high-voltage accelerated program (WP#/ACC) input provides shorter programming times through increased current.
The typical standby mode current is 1 uA at 3.0 V and 5 MHz.