This document describes the features and characteristics of the S29GLxxxM MirrorBit Flash family, including single power supply operation, 0.23 um MirrorBit process technology, SecSi™ (Secured Silicon) sector region, flexible sector architecture, compatibility with JEDEC standards, and performance characteristics.
The S29GLxxxM MirrorBit™ Flash Family provides 3.0 V single‑power flash memory in 32‑, 64‑, 128‑ and 256‑Mbit densities. Devices are built on a 0.23 µm MirrorBit process and include Secured Silicon (SecSi™) sectors for permanent code protection. They support JEDEC‑compatible command sets, CFI compliance, and features such as program/erase suspend‑resume, unlock‑bypass programming, and hardware sector protection.
The family is offered in multiple packages—including 40‑pin, 48‑pin and 56‑pin TSOPs as well as 48‑, 63‑ and 64‑ball BGA options. Typical performance includes 90 ns access time (128 Mbit, 64 Mbit, 32 Mbit) or 100 ns for the 256 Mbit device, 30 ns page read time for the 256 Mbit part, and a standby current as low as 1 pA. Typical endurance is 100 000 erase cycles per sector with a 20‑year data retention rating.
| Operating voltage | 3.0 V single‑power |
|---|---|
| Access time (90 ns devices) | 90 ns |
| Access time (256 Mbit device) | 100 ns |
| Page read time (256 Mbit) | 30 ns |
| Standby current | 1 pA typical |
| Erase cycles per sector | 100 000 typical |
| Data retention | 20 years typical |
| Package options | 40‑pin TSOP, 48‑pin TSOP, 56‑pin TSOP, 48‑ball fine‑pitch BGA, 63‑ball fine‑pitch BGA, 64‑ball Fortified BGA |
| Data bus width | 8‑bit or 16‑bit (with BYTE# option) |
The devices operate from a single 3.0 V power supply.
Typical endurance is 100 000 erase cycles per sector.
The standby current is typically 1 pA.
Available packages include 40‑pin, 48‑pin and 56‑pin TSOPs, as well as 48‑, 63‑ and 64‑ball BGA options.