S29WS-N MirrorBit™ Flash Family is the Spansion LLC developed 256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory products
The document describes the Spansion S29WS256/128/064N Mirrorbit™ Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins.
Key features include a single 1.8 V operating voltage (ranging from 1.70-1.95 V), support for up to 80 MHz operation, and hardware protection mechanisms such as WP# protection of top and bottom sectors. The devices offer programmable burst read modes and various sector protection methods including persistent and password protection.
| Operating Voltage | 1.8 V (1.70-1.95 V) |
|---|---|
| Maximum Operating Frequency | 80 MHz |
| Technology Node | 110 nm |
| Data Retention | 20 years (typical) |
| Cycling Endurance | 100,000 cycles per sector (typical) |
The devices operate on a single voltage of 1.8 V with a range from 1.70 V to 1.95 V.
Yes, these burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks.
The typical cycling endurance is 100,000 cycles per sector.