This document is a data sheet for S29JL064H flash memory, which describes its technical specifications and features. It also mentions S29PL064J as the recommended replacement for this product. Please refer to the S29PL-J data sheet for more information.
The S29JL064H is a 64‑Megabit CMOS flash memory device that operates from a single 3.0 V supply. It supports simultaneous read and write operations with zero latency, allowing one bank to be read while another is being programmed or erased. The device includes a secured silicon sector for optional factory or customer lock.
It is offered in 48‑pin TSOP and 63‑ball fine‑pitch BGA packages. Key performance figures include an access time as fast as 55 ns, active read currents of 2 mA at 1 MHz and 10 mA at 5 MHz, standby current of 200 nA, cycling endurance of 1 Million cycles per sector, and a data retention of 20 years.
| Memory Capacity | 64 Megabit (8 M × 8‑Bit / 4 M × 16‑Bit) |
|---|---|
| Operating Voltage | 3.0 V (single‑supply) |
| Access Time | 55 ns (typical) |
| Active Read Current (1 MHz) | 2 mA |
| Active Read Current (5 MHz) | 10 mA |
| Standby Current | 200 nA (typical) |
| Cycling Endurance | 1 Million cycles per sector (typical) |
| Data Retention | 20 years (typical) |
| Package Options | 48‑pin TSOP, 63‑ball Fine‑Pitch BGA |
The device operates from a single 3.0 V power supply.
The access time can be as fast as 55 ns.
Each sector can endure about 1 Million cycles typical.
Data is retained for 20 years typical.