AO4403 is a P-Channel Enhancement Mode Field Effect Transistor produced by Alpha & Omega Semiconductor. It has excellent RDS(ON), low gate charge, and can operate with a gate voltage as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
The AO4403 P‑Channel enhancement mode field‑effect transistor uses trench technology to achieve low gate charge and operation with gate voltages as low as 2.5 V. It is suitable for use as a load switch or in PWM applications, with source leads separated for Kelvin connections.
The datasheet provides absolute maximum ratings, static and dynamic electrical characteristics, switching parameters, typical thermal performance, and package information for the SO‑8 device, along with tape‑and‑reel handling data.
| Drain-Source Voltage (Vds) | -30 V |
|---|---|
| Gate-Source Voltage (Vgs) | +12 V |
| Input Capacitance (Ciss) | 940 pF |
| Total Gate Charge (Qg) | 9.4 nC |
The maximum drain‑source voltage is -30 V.
The typical total gate charge is 9.4 nC.
The AO4403 is supplied in an SO‑8 package.