The Toshiba 2SK2823 is a silicon N‑channel MOSFET designed for high‑speed switching and analog switch applications. It features a low gate‑threshold voltage and a small TO‑2836 (S‑MINI) package, making it suitable for portable equipment and a wide range of electronic devices.\n\nKey specifications include a drain‑source voltage of 20 V, gate‑source voltage of 10 V, and a maximum drain current of 100 mA. The device is electrostatic‑sensitive, so it must be handled with caution and stored within –55 °C to 150 °C temperature limits.
| Drain‑Source Voltage (VDS) | 20 V |
|---|---|
| Gate‑Source Voltage (VGS) | 10 V |
| DC Drain Current (ID) | 100 mA |
| Drain Power Dissipation (PD) | 200 mW |
| Maximum Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
The maximum drain‑source voltage is 20 V.
It uses a JEDEC TO‑2836 (S‑MINI) package.