This datasheet describes the Toshiba 28C4321 NPN epitaxial planar transistor, including its maximum voltage and current ratings, power dissipation limits, and key electrical parameters such as gain, capacitances, and noise figure. The document also lists storage temperature range and junction temperature specifications.
Performance graphs are provided for transition frequency, insertion gain, noise figure, S‑parameters, and collector power dissipation over temperature. These data help designers evaluate the device for VHF/UHF low‑noise amplifier applications.
| Collector‑Base Voltage (V_CBO) | 20 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | 10 V |
| Emitter‑Base Voltage (V_EBO) | 15 V |
| Collector Current (I_C) | 40 mA |
| Collector Power Dissipation (P_C) | 100 mW |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 °C to 125 °C |
| Noise Figure (NF) | 1.1 dB at 1 GHz |
The maximum collector‑emitter voltage is 10 V.
The typical noise figure is 1.1 dB at 1 GHz.
The device can be stored from –55 °C to 125 °C.