The 2SK2991 is a high‑speed, high‑voltage N‑channel MOSFET designed for DC‑DC converter, relay drive, and motor drive applications. It features low drain‑source on‑resistance and high forward transfer admittance, making it suitable for high‑efficiency switching circuits.
The datasheet lists key electrical parameters such as a 500 V drain‑source rating, 5 A continuous drain current, and a typical on‑resistance of 1.35 mΩ. Thermal data include a channel‑to‑case resistance of 2.5 °C/W and a maximum power dissipation of 50 W at 25 °C. Safe operating area curves and transient thermal impedance are also provided.
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) | 5 A |
| On‑Resistance (RDS(on)) | 1.35 mΩ (typ) |
| Gate Threshold Voltage (Vth) | 2.0 ~ 4.0 V |
| Thermal Resistance, Channel‑to‑Case (RθJC) | 2.5 °C/W |
The device is rated for a maximum drain‑source voltage of 500 V.
The typical on‑state resistance is 1.35 mΩ.
It can be stored from –55 °C to +150 °C.