The SF1500GX22 is a high‑power silicon diffused thyristor designed for demanding control applications. The document lists its maximum voltage and current ratings, thermal limits, and recommended gate drive conditions.
Key sections include electrical characteristics, average on‑state power, gate trigger behavior, recommended gate circuit, and transient thermal impedance curves, giving designers the data needed to integrate the device safely and reliably.
| Repetitive Peak Off-State Voltage (VDRM) | 4000 V |
|---|---|
| Average On-State Current (Iav) | 1500 A |
| Peak One‑Cycle Surge On-State Current (50 Hz) | 30 000 A |
| Junction Temperature Range (Tj) | -40 °C to 125 °C |
| Recommended Gate Supply | 15 V, 80 Ω, 1 s pulse |
The device can withstand a repetitive peak off‑state voltage of 4000 V.
The average on‑state current is rated at 1500 A.
A gate supply of 15 V with a gate resistance of 80 Ω and a 1 s pulse is recommended.
The junction temperature can operate from –40 °C up to 125 °C.