The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R1002 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1002 can be used for at least 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R1002 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
The MB85R1002 is a ferroelectric RAM (FRAM) device offering 65,536 words × 16 bits of non‑volatile memory. It retains data without a backup battery and provides high read/write endurance compared with flash or EEPROM.
The chip uses a pseudo‑SRAM interface compatible with standard asynchronous SRAM, operates from 3.0 V to 3.6 V, and is specified for temperatures from –20 °C to +85 °C. It is available in 48‑pin plastic TSOP and FBGA packages with a 0.75 mm lead pitch.