TSB1184A is a low Vce(sat) PNP transistor with BVCEO = -50V Ic = -3A VCE (SAT) = -0.3V(typ.) @Ic / Ib = -2A / -0.1A. Its features are low Vce(sat) and excellent DC current gain characteristics.
The TSC TSB1184A is a low VCE(sat) PNP silicon transistor offered in a TO‑252 package. It features an epitaxial planar structure and high DC current gain.
The document lists pin assignments, absolute maximum ratings, detailed electrical characteristics, and mechanical drawing dimensions, along with performance curves such as current gain and saturation voltage versus collector current.
| Collector‑Base Voltage (V_CBO) | -50 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | -50 V |
| Emitter‑Base Voltage (V_EBO) | -6 V |
| Collector Current (I_C) | -3 A |
| Power Dissipation (P_D) | 1.0 W |
| Operating Junction Temperature (T_j) | +150 °C |
| Storage Temperature Range | -55 to +150 °C |
| Typical V_CE(sat) | 0.3 V |
| Transition Frequency (f_T) | 100 MHz |
| Output Capacitance | 55 pF |
The maximum collector current is 3 A.
Typical V_CE(sat) is 0.3 V.
It is supplied in a TO‑252 package, tape & reel.
The transistor can operate up to +150 °C.